050-4909 rev b maximum ratings all ratings: t c = 25 c unless otherwise specified. static electrical characteristics symbol bv dss v ds (on) i dss i gss g fs v gs (th) characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 m a) on state drain voltage 1 (i d (on) = 5a, v gs = 10v) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 25v, i d = 5a) gate threshold voltage (v ds = v gs , i d = 50ma) min typ max 450 4 25 250 100 3 5.8 25 unit volts m a na mhos volts symbol v dss v dgo i d v gs p d r q jc t j ,t stg t l parameter drain-source voltage drain-gate voltage continuous drain current @ t c = 25 c gate-source voltage total power dissipation @ t c = 25 c junction to case operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. arf449a/449b 450 450 9 30 165 0.76 -55 to 150 300 unit volts amps volts watts c/w c rf power mosfets n- channel enhancement mode 150v 150w 120mhz the arf449a and ARF449B comprise a symmetric pair of common source rf power transistors designed for push- pull scientific, commercial, medical and industrial rf power amplifier applications up to 120 mhz. ? specified 150 volt, 81.36 mhz characteristics: ? output power = 150 watts. ? gain = 13db (class c) ? efficiency = 75% ? low cost common source rf package. ? very high breakdown for improved ruggedness. ? low thermal resistance. ? nitride passivated die for improved reliability. to-247 arf449a ARF449B g d s common source caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com
050-4909 rev b dynamic characteristics arf449a/449b symbol c iss c oss c rss t d(on) t r t d(off) t f characteristic input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 150v f = 1 mhz v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25 c r g = 1.6 w min typ max 980 1200 87 120 25 40 510 3.1 7 15 25 37 unit pf ns functional characteristics symbol g ps h y test conditions f = 81.36 mhz v gs = 0v v dd = 150v p out = 150w no degradation in output power characteristic common source amplifier power gain drain efficiency electrical ruggedness vswr 20:1 min typ max 12 13 70 75 unit db % 1 pulse test: pulse width < 380 m s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein. 1 5 10 50 100 500 gain (db) frequency (mhz) figure 1, typical gain vs frequency 30 25 20 15 10 5 0 30 45 60 75 90 105 120 class c v dd = 150v p out = 150w 16 12 8 4 0 02 468 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 3000 1000 500 100 50 10 1 5 10 50 150 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 m sec. pulse test @ <0.5 % duty cycle t j = -55 c t j = -55 c t j = +125 c t j = +25 c t c =+25 c t j =+150 c single pulse operation here limited by r ds (on) c iss c oss c rss 50 10 5 1 .5 .1 10 m s 1ms 10ms 100ms dc 100 m s
050-4909 rev b freq. (mhz) z in - gate shunted by 25 z ol - conjugate of optimum load impedance for 150w at 150v z in ( )z ol ( ) 2.0 13.5 27.0 40.0 65.0 80.0 100.0 93.0 - j 10 63.0 - j 43 32.0 - j 43 17.5 - j 34 7.7 - j 22 5.1 - j 16 3.4 - j 12 23.00 - j 7.0 4.30 - j 9.1 1.00 - j 4.2 0.42 - j 1.7 0.35 + j 1.1 0.56 + j 2.5 0.90 + j 3.8 g ps , common source amplifier gain (db) p out , power out (watts) figure 8, typical common source amplifier gain vs power out 14 12 10 8 6 0 40 80 120 160 t c , case temperature ( c) figure 5, typical threshold voltage vs temperature 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 160 120 80 40 0 02 4 6810 25 20 15 10 5 0 1 5 10 15 20 25 30 p in , power in (watts) figure 7, typical power out vs power in p out , power out (watts) v ds , drain-to-source voltage (volts) figure 6, typical output characteristics i d , drain current (amperes) v gs(th) , threshold voltage (normalized) arf449a/449b 5.5v 4.5v 5v 6v v gs =8, 10 & 15v z q jc , thermal impedance ( c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 9, typical maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.8 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z q jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 class c v dd = 150v f = 81.36 mhz table 1 - typical class c large signal inpu t-o utput impedance class c v dd = 150v f = 81.36 mhz 6.5v
050-4909 rev b l1 c2 t1 r1 dut l2 l3 l4 c3 c6 c7 c5 l5 150v + - rf output rf input c1 -- 680pf unelco c2-c4 -- arco 463 mica trimmer c5-c7 -- 1nf 500v cog chip l1 -- 0.8" #18 awg into hairpin ~19nh l2-l3 -- 3t #18 awg .25" id ~50nh l4 -- 10t #18 awg .25" id ~470nh l5 -- vk200-4b ferrite choke ~3uh r1 -- 25 ohm 1/2w carbon t1 -- 4:1 broadband transformer 81.36 mhz test circuit c1 c4 parts list to-247 package outline 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) source 2-plcs. top view arf449a device ARF449B gate drain source source drain gate dimensions in millimeters and (inches) note: the arf446 and arf447 comprise a symmetric pair of rf power transistors and meet the same electrical specifications. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382 - 8028 fax: (541) 388 - 0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 arf449a/449b 81.36 mhz test circuit
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